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Si4920DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
30
20
0.10
0.08
10
T J = 150 °C
T J = 25 °C
0.06
0.04
0.02
I D = 6.9 A
1
0
0.2
0.4 0.6 0.8 1.0
1.2
1.4
0
0
2
4
6
8
10
0.4
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
30
V GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
T C = 25 °C
0.2
0.0
I D = 250 μ A
25
Single Pulse
20
- 0.2
15
- 0.4
10
- 0.6
- 0.8
- 1.0
5
0
- 50
- 25
0
25
50
75
100
125
150
0.01
0.10
1.00
10.00
T J - Temperature (°C)
Threshold Voltage
Time (s)
Single Pulse Power
2
1
Duty Cycle = 0.5
0.2
Notes:
t 1
0.1
0.01
0.1
0.05
0.02
Single Pulse
P DM
t 1
t 2
1. Duty Cycle, D =
t 2
2. Per Unit Base = R thJA = 62.5 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
10 -4
10 -3
10 -2
10 -1
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70667 .
www.vishay.com
4
Document Number: 70667
S09-0767-Rev. E, 04-May-09
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